IRFR3707TRLPBF
- Mfr.Part #
- IRFR3707TRLPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 61A DPAK
- Stock
- 25,420
- In Stock :
- 25,420
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 1990pF @ 15V
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Min Operating Temperature :
- -55°C
- Rds On (Max) @ Id, Vgs :
- 13mOhm @ 15A, 10V
- Drain to Source Breakdown Voltage :
- 30V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Vgs (Max) :
- ±20V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Gate Charge (Qg) (Max) @ Vgs :
- 19nC @ 4.5V
- Published :
- 2004
- Series :
- HEXFET®
- Supplier Device Package :
- D-Pak
- Number of Pins :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 61A Tc
- Packaging :
- Tape and Reel (TR)
- Input Capacitance :
- 1.99nF
- Mounting Type :
- Surface Mount
- Continuous Drain Current (ID) :
- 61A
- Rds On Max :
- 13 mΩ
- Drain to Source Voltage (Vdss) :
- 30V
- Number of Elements :
- 1
- FET Type :
- N-Channel
- Mount :
- Surface Mount
- Power Dissipation-Max :
- 87W Tc
- RoHS Status :
- RoHS Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Resistance :
- 17.5mOhm
- Turn On Delay Time :
- 8.5 ns
- Turn-Off Delay Time :
- 11.8 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Operating Temperature :
- -55°C~175°C TJ
- Power Dissipation :
- 87W
- Max Operating Temperature :
- 175°C
- Datasheets
- IRFR3707TRLPBF

N-Channel Tape & Reel (TR) 13mOhm @ 15A, 10V ±20V 1990pF @ 15V 19nC @ 4.5V 30V TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR3707TRLPBF Overview
The maximum input capacitance of this device is 1990pF @ 15V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 61A.When VGS=30V, and ID flows to VDS at 30VVDS, the drain-source breakdown voltage is 30V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 11.8 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 17.5mOhm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 8.5 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 30V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
IRFR3707TRLPBF Features
a continuous drain current (ID) of 61A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 11.8 ns
single MOSFETs transistor is 17.5mOhm
a 30V drain to source voltage (Vdss)
IRFR3707TRLPBF Applications
There are a lot of Infineon Technologies
IRFR3707TRLPBF applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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