IRFR3707PBF
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- Mfr.Part #
- IRFR3707PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 61A DPAK
- Stock
- 1,481
- In Stock ：
- 1,481
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Voltage (Vdss) :
- 30V
- Lead Free :
- Lead Free
- Power Dissipation-Max :
- 87W Tc
- Voltage - Rated DC :
- 30V
- Continuous Drain Current (ID) :
- 61A
- Min Operating Temperature :
- -55°C
- Supplier Device Package :
- D-Pak
- Published :
- 2004
- Fall Time (Typ) :
- 3.3 ns
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- Mount :
- Surface Mount
- Current Rating :
- 61A
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Turn-Off Delay Time :
- 11.8 ns
- Packaging :
- Tube
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- HEXFET®
- Number of Pins :
- 3
- FET Type :
- N-Channel
- Gate to Source Voltage (Vgs) :
- 20V
- Drain to Source Breakdown Voltage :
- 30V
- Current - Continuous Drain (Id) @ 25°C :
- 61A Tc
- Rds On Max :
- 13 mΩ
- Input Capacitance (Ciss) (Max) @ Vds :
- 1990pF @ 15V
- Power Dissipation :
- 87W
- Drain to Source Resistance :
- 17.5mOhm
- RoHS Status :
- RoHS Compliant
- Vgs (Max) :
- ±20V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Input Capacitance :
- 1.99nF
- Radiation Hardening :
- No
- Rise Time :
- 78ns
- Gate Charge (Qg) (Max) @ Vgs :
- 19nC @ 4.5V
- Operating Temperature :
- -55°C~175°C TJ
- Max Operating Temperature :
- 175°C
- Rds On (Max) @ Id, Vgs :
- 13mOhm @ 15A, 10V
- Turn On Delay Time :
- 8.5 ns
- Resistance :
- 13mOhm
- Datasheets
- IRFR3707PBF
N-Channel Tube 13mOhm @ 15A, 10V ±20V 1990pF @ 15V 19nC @ 4.5V 30V TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR3707PBF Overview
A device's maximum input capacitance is 1990pF @ 15V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 61A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=30V, and this device has a drain-to-source breakdown voltage of 30V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 11.8 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 17.5mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 8.5 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 30V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
IRFR3707PBF Features
a continuous drain current (ID) of 61A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 11.8 ns
single MOSFETs transistor is 17.5mOhm
a 30V drain to source voltage (Vdss)
IRFR3707PBF Applications
There are a lot of Infineon Technologies
IRFR3707PBF applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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