IRFR3707PBF
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- Mfr.Part #
- IRFR3707PBF
- Manufacturer
- International Rectifier
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 61A DPAK
- Stock
- 1,481
- In Stock ：
- 1,481
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On Max :
- 13 mΩ
- Power Dissipation-Max :
- 87W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 19nC @ 4.5V
- Element Configuration :
- Single
- Vgs (Max) :
- ±20V
- Fall Time (Typ) :
- 3.3 ns
- Drain to Source Voltage (Vdss) :
- 30V
- Max Operating Temperature :
- 175°C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- HEXFET®
- Turn On Delay Time :
- 8.5 ns
- Rise Time :
- 78ns
- RoHS Status :
- RoHS Compliant
- Continuous Drain Current (ID) :
- 61A
- Published :
- 2004
- Mounting Type :
- Surface Mount
- Input Capacitance :
- 1.99nF
- Power Dissipation :
- 87W
- Operating Temperature :
- -55°C~175°C TJ
- Current Rating :
- 61A
- Input Capacitance (Ciss) (Max) @ Vds :
- 1990pF @ 15V
- Drain to Source Resistance :
- 17.5mOhm
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Drain to Source Breakdown Voltage :
- 30V
- Packaging :
- Tube
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Resistance :
- 13mOhm
- Turn-Off Delay Time :
- 11.8 ns
- Min Operating Temperature :
- -55°C
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Current - Continuous Drain (Id) @ 25°C :
- 61A Tc
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Rds On (Max) @ Id, Vgs :
- 13mOhm @ 15A, 10V
- Radiation Hardening :
- No
- Supplier Device Package :
- D-Pak
- Voltage - Rated DC :
- 30V
- Gate to Source Voltage (Vgs) :
- 20V
- Mount :
- Surface Mount
- FET Type :
- N-Channel
- Datasheets
- IRFR3707PBF
N-Channel Tube 13mOhm @ 15A, 10V ±20V 1990pF @ 15V 19nC @ 4.5V 30V TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR3707PBF Overview
A device's maximum input capacitance is 1990pF @ 15V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 61A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=30V, and this device has a drain-to-source breakdown voltage of 30V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 11.8 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 17.5mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 8.5 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 30V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
IRFR3707PBF Features
a continuous drain current (ID) of 61A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 11.8 ns
single MOSFETs transistor is 17.5mOhm
a 30V drain to source voltage (Vdss)
IRFR3707PBF Applications
There are a lot of Infineon Technologies
IRFR3707PBF applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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