IRFR3707

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2000

JEDEC-95 Code :

TO-252AA

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Surface Mount :

yes

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

30A

Drain-source On Resistance-Max :

0.0095Ohm

RoHS Status :

Non-RoHS Compliant

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drain to Source Voltage (Vdss) :

30V

Current - Continuous Drain (Id) @ 25°C :

61A Tc

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Transistor Application :

SWITCHING

Number of Elements :

1

Vgs(th) (Max) @ Id :

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

1990pF @ 15V

Avalanche Energy Rating (Eas) :

42 mJ

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

Case Connection :

DRAIN

Qualification Status :

Not Qualified

Series :

HEXFET®

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30

Pulsed Drain Current-Max (IDM) :

220A

FET Type :

N-Channel

Reach Compliance Code :

not_compliant

Power Dissipation-Max :

87W Tc

Rds On (Max) @ Id, Vgs :

13m Ω @ 15A, 10V

Number of Terminations :

2

DS Breakdown Voltage-Min :

30V

JESD-609 Code :

e3

JESD-30 Code :

R-PSSO-G2

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Operating Temperature :

-55°C~175°C TJ