IRFR3706TRR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

280A

Time@Peak Reflow Temperature-Max (s) :

30

Vgs(th) (Max) @ Id :

2V @ 250μA

Case Connection :

DRAIN

RoHS Status :

Non-RoHS Compliant

Operating Temperature :

-55°C~175°C TJ

Terminal Finish :

MATTE TIN OVER NICKEL

Avalanche Energy Rating (Eas) :

220 mJ

Series :

HEXFET®

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.009Ohm

Terminal Form :

Gull wing

Qualification Status :

Not Qualified

Published :

2004

Surface Mount :

yes

ECCN Code :

EAR99

Drain Current-Max (Abs) (ID) :

30A

Drive Voltage (Max Rds On,Min Rds On) :

2.8V 10V

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

88W Tc

Terminal Position :

Single

Rds On (Max) @ Id, Vgs :

9m Ω @ 15A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

2410pF @ 10V

Number of Elements :

1

DS Breakdown Voltage-Min :

20V

Transistor Element Material :

SILICON

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 4.5V

Drain to Source Voltage (Vdss) :

20V

JEDEC-95 Code :

TO-252AA

Vgs (Max) :

±12V

Transistor Application :

SWITCHING

Number of Terminations :

2

JESD-30 Code :

R-PSSO-G2

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)