IRFR3706TRPBF
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- Mfr.Part #
- IRFR3706TRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 75A DPAK
- Stock
- 20,366
- In Stock ：
- 20,366
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Min Operating Temperature :
- -55°C
- Continuous Drain Current (ID) :
- 75A
- Current - Continuous Drain (Id) @ 25°C :
- 75A Tc
- Rds On (Max) @ Id, Vgs :
- 9mOhm @ 15A, 10V
- Published :
- 2004
- Element Configuration :
- Single
- Rise Time :
- 87ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 2410pF @ 10V
- Rds On Max :
- 9 mΩ
- Mount :
- Surface Mount
- Drain to Source Resistance :
- 11mOhm
- Drain to Source Breakdown Voltage :
- 20V
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Voltage - Rated DC :
- 20V
- Power Dissipation :
- 88W
- Gate Charge (Qg) (Max) @ Vgs :
- 35nC @ 4.5V
- Number of Elements :
- 1
- Max Operating Temperature :
- 175°C
- Drain to Source Voltage (Vdss) :
- 20V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Resistance :
- 9mOhm
- Current Rating :
- 75A
- Gate to Source Voltage (Vgs) :
- 12V
- RoHS Status :
- RoHS Compliant
- Power Dissipation-Max :
- 88W Tc
- Number of Pins :
- 3
- Packaging :
- Tape and Reel (TR)
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.8V 10V
- Vgs (Max) :
- ±12V
- Mounting Type :
- Surface Mount
- Series :
- HEXFET®
- Lead Free :
- Lead Free
- Operating Temperature :
- -55°C~175°C TJ
- FET Type :
- N-Channel
- Turn-Off Delay Time :
- 17 ns
- Input Capacitance :
- 2.41nF
- Supplier Device Package :
- D-Pak
- Fall Time (Typ) :
- 4.8 ns
- Datasheets
- IRFR3706TRPBF
N-Channel Tape & Reel (TR) 9mOhm @ 15A, 10V ±12V 2410pF @ 10V 35nC @ 4.5V 20V TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR3706TRPBF Overview
A device's maximum input capacitance is 2410pF @ 10V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 75A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=20V, and this device has a drain-to-source breakdown voltage of 20V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 17 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 11mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 12V.To operate this transistor, you need to apply a 20V drain to source voltage (Vdss).This device uses no drive voltage (2.8V 10V) to reduce its overall power consumption.
IRFR3706TRPBF Features
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 17 ns
single MOSFETs transistor is 11mOhm
a 20V drain to source voltage (Vdss)
IRFR3706TRPBF Applications
There are a lot of Infineon Technologies
IRFR3706TRPBF applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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