IRFR3706PBF
- Mfr.Part #
- IRFR3706PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 75A DPAK
- Stock
- 1,931
- In Stock :
- 1,931
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 75A Tc
- Element Configuration :
- Single
- Supplier Device Package :
- D-Pak
- Drain to Source Resistance :
- 11mOhm
- Vgs (Max) :
- ±12V
- Nominal Vgs :
- 2 V
- Resistance :
- 9mOhm
- REACH SVHC :
- No SVHC
- Fall Time (Typ) :
- 4.8 ns
- Continuous Drain Current (ID) :
- 75A
- Series :
- HEXFET®
- Input Capacitance :
- 2.41nF
- Rds On Max :
- 9 mΩ
- Lead Free :
- Lead Free
- Packaging :
- Tube
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Turn On Delay Time :
- 6.8 ns
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~175°C TJ
- Rds On (Max) @ Id, Vgs :
- 9mOhm @ 15A, 10V
- Number of Elements :
- 1
- Current Rating :
- 75A
- Rise Time :
- 87ns
- Dual Supply Voltage :
- 20V
- Number of Pins :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 35nC @ 4.5V
- Voltage - Rated DC :
- 20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2410pF @ 10V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.8V 10V
- Drain to Source Voltage (Vdss) :
- 20V
- Mounting Type :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 12V
- Drain to Source Breakdown Voltage :
- 20V
- Radiation Hardening :
- No
- Max Operating Temperature :
- 175°C
- Threshold Voltage :
- 2V
- Published :
- 2004
- Min Operating Temperature :
- -55°C
- Power Dissipation :
- 88W
- Mount :
- Surface Mount
- RoHS Status :
- RoHS Compliant
- Turn-Off Delay Time :
- 17 ns
- Power Dissipation-Max :
- 88W Tc
- Datasheets
- IRFR3706PBF

N-Channel Tube 9mOhm @ 15A, 10V ±12V 2410pF @ 10V 35nC @ 4.5V 20V TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR3706PBF Overview
A device's maximal input capacitance is 2410pF @ 10V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 75A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 20V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 17 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 11mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 6.8 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 12V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 2V threshold voltage.This transistor requires a 20V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (2.8V 10V).
IRFR3706PBF Features
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 17 ns
single MOSFETs transistor is 11mOhm
a threshold voltage of 2V
a 20V drain to source voltage (Vdss)
IRFR3706PBF Applications
There are a lot of Infineon Technologies
IRFR3706PBF applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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