IRFR3706

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

2410pF @ 10V

Drain-source On Resistance-Max :

0.009Ohm

Terminal Position :

Single

Surface Mount :

yes

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

Series :

HEXFET®

Qualification Status :

Not Qualified

FET Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Number of Terminations :

2

Transistor Element Material :

SILICON

Published :

2004

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

20V

Time@Peak Reflow Temperature-Max (s) :

30

RoHS Status :

Non-RoHS Compliant

Drain Current-Max (Abs) (ID) :

30A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

2.8V 10V

Power Dissipation-Max :

88W Tc

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

2V @ 250μA

Packaging :

Tube

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

JEDEC-95 Code :

TO-252AA

DS Breakdown Voltage-Min :

20V

Pulsed Drain Current-Max (IDM) :

280A

Terminal Finish :

MATTE TIN OVER NICKEL

Avalanche Energy Rating (Eas) :

220 mJ

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 4.5V

Rds On (Max) @ Id, Vgs :

9m Ω @ 15A, 10V

JESD-30 Code :

R-PSSO-G2

Number of Elements :

1

Vgs (Max) :

±12V

Mounting Type :

Surface Mount