IRFR3704ZTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

4.9 ns

Height :

2.26mm

Vgs(th) (Max) @ Id :

2.55V @ 250µA

Power Dissipation-Max :

48W Tc

ECCN Code :

EAR99

Case Connection :

DRAIN

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

1190pF @ 10V

FET Type :

N-Channel

Rise Time :

8.9ns

Time@Peak Reflow Temperature-Max (s) :

30

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Radiation Hardening :

No

Lead Free :

Lead Free

Drain-source On Resistance-Max :

0.0084Ohm

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 4.5V

Terminal Form :

Gull wing

Length :

6.7056mm

Rds On (Max) @ Id, Vgs :

8.4m Ω @ 15A, 10V

Number of Elements :

1

Operating Temperature :

-55°C~175°C TJ

Number of Terminations :

2

JESD-609 Code :

e3

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Pulsed Drain Current-Max (IDM) :

240A

Drain to Source Breakdown Voltage :

20V

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

Power Dissipation :

48W

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

8.4 ns

Continuous Drain Current (ID) :

60A

Fall Time (Typ) :

12 ns

JEDEC-95 Code :

TO-252AA

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PSSO-G2

RoHS Status :

RoHS Compliant

Width :

6.22mm

Element Configuration :

Single

Series :

HEXFET®

Contact Plating :

Tin

Published :

2004

Transistor Application :

SWITCHING