IRFR3704ZTRL

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

48W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

20V

Peak Reflow Temperature (Cel) :

260

JEDEC-95 Code :

TO-252AA

Pulsed Drain Current-Max (IDM) :

240A

DS Breakdown Voltage-Min :

20V

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 4.5V

Qualification Status :

Not Qualified

Drain-source On Resistance-Max :

0.0084Ohm

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

1190pF @ 10V

Case Connection :

DRAIN

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

60A Tc

JESD-609 Code :

e3

Operating Temperature :

-55°C~175°C TJ

Surface Mount :

yes

Vgs(th) (Max) @ Id :

2.55V @ 250µA

Rds On (Max) @ Id, Vgs :

8.4m Ω @ 15A, 10V

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Terminal Finish :

MATTE TIN OVER NICKEL

Number of Elements :

1

Number of Terminations :

2

Drain Current-Max (Abs) (ID) :

30A

RoHS Status :

Non-RoHS Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

41 mJ

Terminal Position :

Single

Packaging :

Tube

Vgs (Max) :

±20V

FET Type :

N-Channel

Series :

HEXFET®

Published :

2003

JESD-30 Code :

R-PSSO-G2

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

30