IRFR3704TRPBF
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- Mfr.Part #
- IRFR3704TRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 75A DPAK
- Stock
- 14,931
- In Stock ：
- 14,931
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate to Source Voltage (Vgs) :
- 20V
- Drain to Source Voltage (Vdss) :
- 20V
- Series :
- HEXFET®
- Power Dissipation :
- 90W
- Packaging :
- Tape and Reel (TR)
- Power Dissipation-Max :
- 90W Tc
- Vgs (Max) :
- ±20V
- Current - Continuous Drain (Id) @ 25°C :
- 75A Tc
- Published :
- 2004
- FET Type :
- N-Channel
- Voltage - Rated DC :
- 20V
- Rise Time :
- 98ns
- Min Operating Temperature :
- -55°C
- Input Capacitance (Ciss) (Max) @ Vds :
- 1996pF @ 10V
- Rds On (Max) @ Id, Vgs :
- 9.5mOhm @ 15A, 10V
- Drain to Source Breakdown Voltage :
- 20V
- Gate Charge (Qg) (Max) @ Vgs :
- 19nC @ 4.5V
- Mounting Type :
- Surface Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Current Rating :
- 75A
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Continuous Drain Current (ID) :
- 75A
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- RoHS Status :
- RoHS Compliant
- Supplier Device Package :
- D-Pak
- Drain to Source Resistance :
- 14mOhm
- Max Operating Temperature :
- 175°C
- Operating Temperature :
- -55°C~175°C TJ
- Input Capacitance :
- 1.996nF
- Number of Pins :
- 3
- Rds On Max :
- 9.5 mΩ
- Lead Free :
- Lead Free
- Mount :
- Surface Mount
- Datasheets
- IRFR3704TRPBF
N-Channel Tape & Reel (TR) 9.5mOhm @ 15A, 10V ±20V 1996pF @ 10V 19nC @ 4.5V 20V TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR3704TRPBF Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1996pF @ 10V.This device conducts a continuous drain current (ID) of 75A, which is the maximum continuous current transistor can conduct.Using VGS=20V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 20V (that is, no charge flow from drain to source).When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 14mOhm, which means the device is not biased.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 20V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IRFR3704TRPBF Features
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 20V voltage
single MOSFETs transistor is 14mOhm
a 20V drain to source voltage (Vdss)
IRFR3704TRPBF Applications
There are a lot of Infineon Technologies
IRFR3704TRPBF applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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