IRFR3704TRLPBF
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- Mfr.Part #
- IRFR3704TRLPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 75A DPAK
- Stock
- 41,749
- In Stock ：
- 41,749
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Resistance :
- 14mOhm
- Series :
- HEXFET®
- Power Dissipation-Max :
- 90W Tc
- Min Operating Temperature :
- -55°C
- Input Capacitance (Ciss) (Max) @ Vds :
- 1996pF @ 10V
- RoHS Status :
- RoHS Compliant
- Power Dissipation :
- 90W
- Current - Continuous Drain (Id) @ 25°C :
- 75A Tc
- Gate to Source Voltage (Vgs) :
- 20V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Rds On (Max) @ Id, Vgs :
- 9.5mOhm @ 15A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Breakdown Voltage :
- 20V
- Input Capacitance :
- 1.996nF
- Supplier Device Package :
- D-Pak
- Operating Temperature :
- -55°C~175°C TJ
- Drain to Source Voltage (Vdss) :
- 20V
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Current Rating :
- 75A
- Mounting Type :
- Surface Mount
- Voltage - Rated DC :
- 20V
- Rise Time :
- 98ns
- Number of Pins :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Packaging :
- Tape and Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs :
- 19nC @ 4.5V
- Published :
- 2004
- FET Type :
- N-Channel
- Continuous Drain Current (ID) :
- 75A
- Vgs (Max) :
- ±20V
- Lead Free :
- Lead Free
- Max Operating Temperature :
- 175°C
- Mount :
- Surface Mount
- Rds On Max :
- 9.5 mΩ
- Datasheets
- IRFR3704TRLPBF
N-Channel Tape & Reel (TR) 9.5mOhm @ 15A, 10V ±20V 1996pF @ 10V 19nC @ 4.5V 20V TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR3704TRLPBF Overview
A device's maximal input capacitance is 1996pF @ 10V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 75A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 20V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 14mOhm.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 20V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IRFR3704TRLPBF Features
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 20V voltage
single MOSFETs transistor is 14mOhm
a 20V drain to source voltage (Vdss)
IRFR3704TRLPBF Applications
There are a lot of Infineon Technologies
IRFR3704TRLPBF applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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