IRFR3704

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tube

Voltage - Rated DC :

20V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

3V @ 250µA

Operating Temperature :

-55°C~175°C TJ

Rise Time :

98ns

Pulsed Drain Current-Max (IDM) :

240A

Power Dissipation-Max :

90W Tc

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Case Connection :

DRAIN

Number of Elements :

1

Lead Free :

Contains Lead

Current - Continuous Drain (Id) @ 25°C :

75A Tc

RoHS Status :

Non-RoHS Compliant

Avalanche Energy Rating (Eas) :

41 mJ

Rds On (Max) @ Id, Vgs :

9.5m Ω @ 15A, 10V

Reach Compliance Code :

not_compliant

Power Dissipation :

90W

JEDEC-95 Code :

TO-252AA

Vgs (Max) :

±20V

Current Rating :

75A

Number of Pins :

3

ECCN Code :

EAR99

Drain Current-Max (Abs) (ID) :

60A

Turn On Delay Time :

8.4 ns

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.0084Ohm

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Terminal Position :

Single

Mounting Type :

Surface Mount

Turn-Off Delay Time :

12 ns

Time@Peak Reflow Temperature-Max (s) :

30

Fall Time (Typ) :

5 ns

Input Capacitance (Ciss) (Max) @ Vds :

1996pF @ 10V

Continuous Drain Current (ID) :

75A

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

20V

Published :

2004

Number of Terminations :

2

Qualification Status :

Not Qualified

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 4.5V

Series :

HEXFET®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

JESD-30 Code :

R-PSSO-G2

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount

JESD-609 Code :

e3