IRFR3607TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

80mA

Drain Current-Max (Abs) (ID) :

56A

Height :

2.3876mm

JESD-30 Code :

R-PSSO-G2

Drive Voltage (Max Rds On,Min Rds On) :

10V

Fall Time (Typ) :

96 ns

Radiation Hardening :

No

Power Dissipation :

140W

Published :

2010

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

75V

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

3070pF @ 50V

Gate to Source Voltage (Vgs) :

20V

Factory Lead Time :

12 Weeks

Current - Continuous Drain (Id) @ 25°C :

56A Tc

Vgs(th) (Max) @ Id :

4V @ 100µA

Gate Charge (Qg) (Max) @ Vgs :

84nC @ 10V

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Rise Time :

110ns

Resistance :

9mOhm

Operating Temperature :

-55°C~175°C TJ

Width :

6.22mm

FET Type :

N-Channel

Transistor Application :

SWITCHING

REACH SVHC :

No SVHC

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

260

Power Dissipation-Max :

140W Tc

Rds On (Max) @ Id, Vgs :

9m Ω @ 46A, 10V

JEDEC-95 Code :

TO-252AA

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Form :

Gull wing

Threshold Voltage :

2V

Length :

6.7056mm

Nominal Vgs :

2 V

Mount :

Surface Mount

Number of Pins :

3

Transistor Element Material :

SILICON

Turn-Off Delay Time :

43 ns

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

JESD-609 Code :

e3

Number of Terminations :

2

Series :

HEXFET®

Turn On Delay Time :

16 ns