IRFR3505TRPBF
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- Mfr.Part #
- IRFR3505TRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 30A DPAK
- Stock
- 5,538
- In Stock ：
- 5,538
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation :
- 140W
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 6.22mm
- Published :
- 2010
- Current - Continuous Drain (Id) @ 25°C :
- 30A Tc
- Gate to Source Voltage (Vgs) :
- 20V
- Resistance :
- 13mOhm
- Current :
- 71A
- Height :
- 2.3876mm
- Drain to Source Resistance :
- 13mOhm
- Rise Time :
- 74ns
- Mount :
- Surface Mount
- Rds On Max :
- 13 mΩ
- Input Capacitance (Ciss) (Max) @ Vds :
- 2030pF @ 25V
- Mounting Type :
- Surface Mount
- Max Operating Temperature :
- 175°C
- Drain to Source Breakdown Voltage :
- 55V
- RoHS Status :
- RoHS Compliant
- FET Type :
- N-Channel
- Voltage :
- 55V
- Supplier Device Package :
- D-Pak
- Rds On (Max) @ Id, Vgs :
- 13mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Packaging :
- Tape and Reel (TR)
- Fall Time (Typ) :
- 54 ns
- Vgs (Max) :
- ±20V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Input Capacitance :
- 2.03nF
- Continuous Drain Current (ID) :
- 71A
- Turn On Delay Time :
- 13 ns
- Length :
- 6.7056mm
- Min Operating Temperature :
- -55°C
- Operating Temperature :
- -55°C~175°C TJ
- Number of Pins :
- 3
- Element Configuration :
- Single
- Turn-Off Delay Time :
- 43 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 93nC @ 10V
- Drain to Source Voltage (Vdss) :
- 55V
- Series :
- HEXFET®
- Power Dissipation-Max :
- 140W Tc
- Radiation Hardening :
- No
- Datasheets
- IRFR3505TRPBF
N-Channel Tape & Reel (TR) 13mOhm @ 30A, 10V ±20V 2030pF @ 25V 93nC @ 10V 55V TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR3505TRPBF Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2030pF @ 25V.This device conducts a continuous drain current (ID) of 71A, which is the maximum continuous current transistor can conduct.Using VGS=55V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 55V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 43 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 13mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 13 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 55V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IRFR3505TRPBF Features
a continuous drain current (ID) of 71A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 43 ns
single MOSFETs transistor is 13mOhm
a 55V drain to source voltage (Vdss)
IRFR3505TRPBF Applications
There are a lot of Infineon Technologies
IRFR3505TRPBF applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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