IRFR3505PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Case Connection :

DRAIN

Power Dissipation :

140W

Fall Time (Typ) :

54 ns

Number of Pins :

3

Turn-Off Delay Time :

43 ns

Published :

2002

Dual Supply Voltage :

55V

Transistor Element Material :

SILICON

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Continuous Drain Current (ID) :

71A

Height :

2.3876mm

Gate to Source Voltage (Vgs) :

20V

Rise Time :

74ns

Input Capacitance (Ciss) (Max) @ Vds :

2030pF @ 25V

Resistance :

13mOhm

Voltage - Rated DC :

55V

Drain to Source Breakdown Voltage :

55V

RoHS Status :

RoHS Compliant

Lead Free :

Lead Free

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

13m Ω @ 30A, 10V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Pulsed Drain Current-Max (IDM) :

280A

Length :

6.7056mm

FET Type :

N-Channel

Mounting Type :

Surface Mount

Current Rating :

71A

ECCN Code :

EAR99

Turn On Delay Time :

13 ns

Threshold Voltage :

4V

REACH SVHC :

No SVHC

Power Dissipation-Max :

140W Tc

Operating Temperature :

-55°C~175°C TJ

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Nominal Vgs :

4 V

Series :

HEXFET®

Gate Charge (Qg) (Max) @ Vgs :

93nC @ 10V

JESD-30 Code :

R-PSSO-G2

Time@Peak Reflow Temperature-Max (s) :

30

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Contact Plating :

Tin

Peak Reflow Temperature (Cel) :

260

Vgs (Max) :

±20V

Width :

6.22mm

JEDEC-95 Code :

TO-252AA

Mount :

Surface Mount

Number of Terminations :

2

Packaging :

Tube

Vgs(th) (Max) @ Id :

4V @ 250µA