IRFR3504ZTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Case Connection :

DRAIN

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

38 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Element Configuration :

Single

JEDEC-95 Code :

TO-252AA

Avalanche Energy Rating (Eas) :

77 mJ

Power Dissipation :

90W

Length :

6.7056mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

40V

ECCN Code :

EAR99

Operating Temperature :

-55°C~175°C TJ

JESD-609 Code :

e3

Resistance :

9mOhm

Radiation Hardening :

No

Transistor Element Material :

SILICON

Width :

6.22mm

Published :

2005

Current :

42A

Turn On Delay Time :

15 ns

Packaging :

Tape and Reel (TR)

Series :

HEXFET®

Time@Peak Reflow Temperature-Max (s) :

30

Mount :

Surface Mount

Continuous Drain Current (ID) :

77A

Input Capacitance (Ciss) (Max) @ Vds :

1510pF @ 25V

Turn-Off Delay Time :

30 ns

Number of Terminations :

2

Number of Pins :

3

Factory Lead Time :

12 Weeks

Power Dissipation-Max :

90W Tc

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Height :

2.26mm

Peak Reflow Temperature (Cel) :

260

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

JESD-30 Code :

R-PSSO-G2

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

42A Tc

Lead Free :

Lead Free

Number of Elements :

1

Current Rating :

42A

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

Voltage - Rated DC :

40V

Rise Time :

74ns

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

9m Ω @ 42A, 10V

Voltage :

40V