IRFR3504ZTRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

30

Continuous Drain Current (ID) :

77A

Drain to Source Breakdown Voltage :

40V

JESD-30 Code :

R-PSSO-G2

Avalanche Energy Rating (Eas) :

77 mJ

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.009Ohm

Length :

6.7056mm

Transistor Element Material :

SILICON

JEDEC-95 Code :

TO-252AA

Input Capacitance (Ciss) (Max) @ Vds :

1510pF @ 25V

Power Dissipation :

90W

Drive Voltage (Max Rds On,Min Rds On) :

10V

Width :

6.22mm

Turn On Delay Time :

15 ns

Mount :

Surface Mount

Number of Terminations :

2

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

20V

JESD-609 Code :

e3

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

42A Tc

Radiation Hardening :

No

Published :

2010

Element Configuration :

Single

Number of Pins :

3

Series :

HEXFET®

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

42A

Fall Time (Typ) :

38 ns

Rise Time :

74ns

Power Dissipation-Max :

90W Tc

FET Type :

N-Channel

Turn-Off Delay Time :

30 ns

Operating Temperature :

-55°C~175°C TJ

RoHS Status :

RoHS Compliant

Rds On (Max) @ Id, Vgs :

9m Ω @ 42A, 10V

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Height :

2.26mm

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

260

Case Connection :

DRAIN