IRFR3504TRPBF
- Mfr.Part #
- IRFR3504TRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 30A DPAK
- Stock
- 684
- In Stock :
- 684
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~175°C TJ
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Min Operating Temperature :
- -55°C
- Drain to Source Resistance :
- 9.2mOhm
- Vgs (Max) :
- ±20V
- Rds On Max :
- 9.2 mΩ
- Current - Continuous Drain (Id) @ 25°C :
- 30A Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain to Source Breakdown Voltage :
- 40V
- FET Type :
- N-Channel
- Power Dissipation-Max :
- 140W Tc
- Series :
- HEXFET®
- Published :
- 2010
- Max Operating Temperature :
- 175°C
- Packaging :
- Tape and Reel (TR)
- Input Capacitance (Ciss) (Max) @ Vds :
- 2150pF @ 25V
- Number of Pins :
- 3
- RoHS Status :
- RoHS Compliant
- Rise Time :
- 53ns
- Continuous Drain Current (ID) :
- 87A
- Mount :
- Surface Mount
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Power Dissipation :
- 140W
- Mounting Type :
- Surface Mount
- Fall Time (Typ) :
- 22 ns
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance :
- 2.15nF
- Drain to Source Voltage (Vdss) :
- 40V
- Gate Charge (Qg) (Max) @ Vgs :
- 71nC @ 10V
- Supplier Device Package :
- D-Pak
- Rds On (Max) @ Id, Vgs :
- 9.2mOhm @ 30A, 10V
- Datasheets
- IRFR3504TRPBF

N-Channel Tape & Reel (TR) 9.2mOhm @ 30A, 10V ±20V 2150pF @ 25V 71nC @ 10V 40V TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR3504TRPBF Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2150pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 87A.With a drain-source breakdown voltage of 40V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 40V.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 9.2mOhm exists between the drain and source.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 40V.Using drive voltage (10V) reduces this device's overall power consumption.
IRFR3504TRPBF Features
a continuous drain current (ID) of 87A
a drain-to-source breakdown voltage of 40V voltage
single MOSFETs transistor is 9.2mOhm
a 40V drain to source voltage (Vdss)
IRFR3504TRPBF Applications
There are a lot of Infineon Technologies
IRFR3504TRPBF applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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