IRFR3504PBF
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- Mfr.Part #
- IRFR3504PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 30A DPAK
- Stock
- 40,175
- In Stock ：
- 40,175
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance :
- 2.15nF
- Current - Continuous Drain (Id) @ 25°C :
- 30A Tc
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Supplier Device Package :
- D-Pak
- Number of Pins :
- 3
- RoHS Status :
- RoHS Compliant
- Power Dissipation-Max :
- 140W Tc
- Series :
- HEXFET®
- Gate to Source Voltage (Vgs) :
- 20V
- Fall Time (Typ) :
- 22 ns
- Drain to Source Breakdown Voltage :
- 40V
- Mount :
- Surface Mount
- FET Type :
- N-Channel
- Drain to Source Voltage (Vdss) :
- 40V
- Max Operating Temperature :
- 175°C
- Continuous Drain Current (ID) :
- 87A
- Voltage - Rated DC :
- 40V
- Turn-Off Delay Time :
- 36 ns
- Turn On Delay Time :
- 11 ns
- Min Operating Temperature :
- -55°C
- Input Capacitance (Ciss) (Max) @ Vds :
- 2150pF @ 25V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Resistance :
- 9.2mOhm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Packaging :
- Tube
- Current Rating :
- 87A
- Nominal Vgs :
- 4 V
- Rds On (Max) @ Id, Vgs :
- 9.2mOhm @ 30A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 71nC @ 10V
- Rds On Max :
- 9.2 mΩ
- Mounting Type :
- Surface Mount
- Rise Time :
- 53ns
- Drain to Source Resistance :
- 7.8mOhm
- Vgs (Max) :
- ±20V
- Radiation Hardening :
- No
- Dual Supply Voltage :
- 40V
- Lead Free :
- Lead Free
- Power Dissipation :
- 140W
- Published :
- 2002
- Element Configuration :
- Single
- Threshold Voltage :
- 4V
- Operating Temperature :
- -55°C~175°C TJ
- REACH SVHC :
- No SVHC
- Datasheets
- IRFR3504PBF
N-Channel Tube 9.2mOhm @ 30A, 10V ±20V 2150pF @ 25V 71nC @ 10V 40V TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR3504PBF Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2150pF @ 25V.This device has a continuous drain current (ID) of [87A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=40V, the drain-source breakdown voltage is 40V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 36 ns.MOSFETs have 7.8mOhm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 11 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 4V.In order to operate this transistor, a voltage of 40V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IRFR3504PBF Features
a continuous drain current (ID) of 87A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 36 ns
single MOSFETs transistor is 7.8mOhm
a threshold voltage of 4V
a 40V drain to source voltage (Vdss)
IRFR3504PBF Applications
There are a lot of Infineon Technologies
IRFR3504PBF applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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