IRFR3411TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Recovery Time :

170 ns

Power Dissipation :

130W

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Length :

6.7056mm

Current Rating :

32A

RoHS Status :

ROHS3 Compliant

Rise Time :

35ns

Fall Time (Typ) :

35 ns

REACH SVHC :

No SVHC

Power Dissipation-Max :

130W Tc

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Operating Temperature :

-55°C~175°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

1960pF @ 25V

Element Configuration :

Single

Threshold Voltage :

4V

Time@Peak Reflow Temperature-Max (s) :

30

JEDEC-95 Code :

TO-252AA

Width :

6.22mm

Turn-Off Delay Time :

39 ns

Published :

2004

Vgs (Max) :

±20V

ECCN Code :

EAR99

Radiation Hardening :

No

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs(th) (Max) @ Id :

4V @ 250µA

JESD-30 Code :

R-PSSO-G2

Drive Voltage (Max Rds On,Min Rds On) :

10V

Case Connection :

DRAIN

Terminal Form :

Gull wing

Number of Terminations :

2

Height :

2.26mm

Nominal Vgs :

4 V

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

100V

Current - Continuous Drain (Id) @ 25°C :

32A Tc

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

71nC @ 10V

Factory Lead Time :

12 Weeks

Turn On Delay Time :

11 ns

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Series :

HEXFET®

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Continuous Drain Current (ID) :

32A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistance :

44mOhm

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

44m Ω @ 16A, 10V

Voltage - Rated DC :

100V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier