IRFR3411PBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 250µA

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Operating Temperature :

-55°C~175°C TJ

Power Dissipation-Max :

130W Tc

Surface Mount :

yes

Qualification Status :

Not Qualified

Configuration :

SINGLE WITH BUILT-IN DIODE

ECCN Code :

EAR99

Number of Terminations :

2

Terminal Form :

Gull wing

Drain Current-Max (Abs) (ID) :

32A

Avalanche Energy Rating (Eas) :

185 mJ

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Transistor Application :

SWITCHING

JEDEC-95 Code :

TO-252AA

Reach Compliance Code :

not_compliant

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

71nC @ 10V

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Drain-source On Resistance-Max :

0.044Ohm

Terminal Position :

Single

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

32A Tc

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

44m Ω @ 16A, 10V

JESD-30 Code :

R-PSSO-G2

Case Connection :

DRAIN

Packaging :

Tube

Drain to Source Voltage (Vdss) :

100V

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

30

Published :

2002

Input Capacitance (Ciss) (Max) @ Vds :

1960pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

100V

Pulsed Drain Current-Max (IDM) :

110A

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

Series :

HEXFET®