IRFR3410TRRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance :

1.69nF

Rds On (Max) @ Id, Vgs :

39mOhm @ 18A, 10V

Operating Temperature :

-55°C~175°C TJ

Vgs(th) (Max) @ Id :

4V @ 250µA

Power Dissipation :

110W

Width :

6.22mm

Length :

6.7056mm

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

1690pF @ 25V

Mounting Type :

Surface Mount

RoHS Status :

RoHS Compliant

Gate Charge (Qg) (Max) @ Vgs :

56nC @ 10V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Turn-Off Delay Time :

40 ns

Mount :

Surface Mount

Rise Time :

27ns

Drain to Source Resistance :

39mOhm

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

100V

Number of Pins :

3

Vgs (Max) :

±20V

Max Operating Temperature :

175°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

HEXFET®

Current - Continuous Drain (Id) @ 25°C :

31A Tc

Element Configuration :

Single

Published :

2004

Supplier Device Package :

D-Pak

Turn On Delay Time :

12 ns

Gate to Source Voltage (Vgs) :

20V

Rds On Max :

39 mΩ

Drain to Source Voltage (Vdss) :

100V

Min Operating Temperature :

-55°C

Power Dissipation-Max :

3W Ta 110W Tc

Fall Time (Typ) :

13 ns

Continuous Drain Current (ID) :

31A

Height :

2.3876mm

Packaging :

Tape and Reel (TR)