IRFR3410TRPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Drain to Source Breakdown Voltage :

100V

Time@Peak Reflow Temperature-Max (s) :

30

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

40 ns

Contact Plating :

Tin

Turn On Delay Time :

12 ns

Terminal Form :

Gull wing

Element Configuration :

Single

Lead Free :

Lead Free

JESD-30 Code :

R-PSSO-G2

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

31A

Radiation Hardening :

No

Factory Lead Time :

12 Weeks

JESD-609 Code :

e3

Number of Terminations :

2

Dual Supply Voltage :

100V

Voltage - Rated DC :

100V

Power Dissipation :

110W

Peak Reflow Temperature (Cel) :

260

Nominal Vgs :

4 V

Mount :

Surface Mount

JEDEC-95 Code :

TO-252AA

Resistance :

39mOhm

Height :

2.3876mm

REACH SVHC :

No SVHC

Vgs (Max) :

±20V

Fall Time (Typ) :

13 ns

Series :

HEXFET®

Rds On (Max) @ Id, Vgs :

39m Ω @ 18A, 10V

Width :

6.22mm

Current Rating :

31A

Termination :

SMD/SMT

Threshold Voltage :

4V

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

3

Published :

2004

Operating Temperature :

-55°C~175°C TJ

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Power Dissipation-Max :

3W Ta 110W Tc

Rise Time :

27ns

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

31A Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs :

56nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

1690pF @ 25V

Length :

6.7056mm