IRFR3410TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

2

Resistance :

39mOhm

Nominal Vgs :

4 V

Terminal Form :

Gull wing

Height :

2.3876mm

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

100V

Number of Pins :

3

FET Type :

N-Channel

JESD-30 Code :

R-PSSO-G2

Input Capacitance (Ciss) (Max) @ Vds :

1690pF @ 25V

Rise Time :

27ns

Continuous Drain Current (ID) :

31A

JEDEC-95 Code :

TO-252AA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

260

Length :

6.7056mm

Published :

2004

Element Configuration :

Single

Power Dissipation-Max :

3W Ta 110W Tc

Gate Charge (Qg) (Max) @ Vgs :

56nC @ 10V

Transistor Element Material :

SILICON

Voltage - Rated DC :

100V

Power Dissipation :

110W

Series :

HEXFET®

Vgs(th) (Max) @ Id :

4V @ 250µA

Turn On Delay Time :

12 ns

Threshold Voltage :

4V

REACH SVHC :

No SVHC

Number of Elements :

1

Termination :

SMD/SMT

JESD-609 Code :

e3

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Contact Plating :

Tin

Current Rating :

31A

Case Connection :

DRAIN

Width :

6.22mm

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Operating Temperature :

-55°C~175°C TJ

Rds On (Max) @ Id, Vgs :

39m Ω @ 18A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

31A Tc

Gate to Source Voltage (Vgs) :

20V

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Dual Supply Voltage :

100V

ECCN Code :

EAR99

Mount :

Surface Mount

Factory Lead Time :

12 Weeks

Turn-Off Delay Time :

40 ns

Time@Peak Reflow Temperature-Max (s) :

30

Fall Time (Typ) :

13 ns