IRFR3410TRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

56nC @ 10V

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

140 mJ

Published :

2004

Reach Compliance Code :

not_compliant

JEDEC-95 Code :

TO-252AA

DS Breakdown Voltage-Min :

100V

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

30A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drain to Source Voltage (Vdss) :

100V

Time@Peak Reflow Temperature-Max (s) :

30

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Vgs (Max) :

±20V

Series :

HEXFET®

JESD-30 Code :

R-PSSO-G2

Vgs(th) (Max) @ Id :

4V @ 250µA

Terminal Position :

Single

Surface Mount :

yes

Drain-source On Resistance-Max :

0.039Ohm

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

1690pF @ 25V

Pulsed Drain Current-Max (IDM) :

125A

Number of Terminations :

2

Qualification Status :

Not Qualified

Current - Continuous Drain (Id) @ 25°C :

31A Tc

Peak Reflow Temperature (Cel) :

260

Power Dissipation-Max :

3W Ta 110W Tc

Rds On (Max) @ Id, Vgs :

39m Ω @ 18A, 10V

Mounting Type :

Surface Mount

Factory Lead Time :

12 Weeks