IRFR3410PBF

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Mfr.Part #
IRFR3410PBF
Manufacturer
Infineon Technologies
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 100V 31A DPAK
Stock
10,267
In Stock :
10,267

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Mounting Type :
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds :
1690pF @ 25V
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Published :
2004
Operating Temperature :
-55°C~175°C TJ
Reach Compliance Code :
not_compliant
RoHS Status :
ROHS3 Compliant
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
4V @ 250µA
Factory Lead Time :
20 Weeks
Gate Charge (Qg) (Max) @ Vgs :
56nC @ 10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation-Max :
3W Ta 110W Tc
Drain to Source Voltage (Vdss) :
100V
ECCN Code :
EAR99
Rds On (Max) @ Id, Vgs :
39m Ω @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C :
31A Tc
Packaging :
Tube
FET Type :
N-Channel
Series :
HEXFET®
Drive Voltage (Max Rds On,Min Rds On) :
10V
Datasheets
IRFR3410PBF
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IRFR3410PBF from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Operating Temperature:-55°C~175°C TJ, IRFR3410PBF pinout, IRFR3410PBF datasheet PDF, IRFR3410PBF amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IRFR3410PBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRFR3410PBF


N-Channel Tube 39m Ω @ 18A, 10V ±20V 1690pF @ 25V 56nC @ 10V 100V TO-252-3, DPak (2 Leads + Tab), SC-63

Description


The IRFR3410PBF is a HEXFET? single N-channel Power MOSFET that offers a low gate-to-drain charge to reduce switching losses. It is suitable for high-frequency DC-to-DC converters. An N-Channel MOSFET makes a current channel out of electrons. This allows electrons to pass swiftly and readily across the current when the MOSFET is turned on. Since of the unique properties of N-Channel MOSFETs, the P-Channel chip must be 2 to 3 times larger than the N-Channel chip because the mobility of the carriers is around 2 to 3 times higher for the same RDS(on) value. It is common practice to use MOSFET transistor N-Channels in high current applications.



Features


  • Fully Characterized Capacitance Including Effective COSS to Simplify Design

  • Fully Characterized Avalanche Voltage and Current

  • Dynamic dV/dt Rating

  • Fast Switching

  • Fully Avalanche Rating



Applications


  • High-frequency DC-DC converters

  • Lead-Free

  • Power Management

  • Small motor control

  • Automotive applications


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