IRFR3303TRR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

4V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

750pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Form :

Gull wing

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

Power Dissipation-Max :

57W Tc

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

30

JESD-609 Code :

e3

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

120A

Number of Terminations :

2

Surface Mount :

yes

Current - Continuous Drain (Id) @ 25°C :

33A Tc

Series :

HEXFET®

RoHS Status :

Non-RoHS Compliant

JEDEC-95 Code :

TO-252AA

Packaging :

Tape and Reel (TR)

Avalanche Energy Rating (Eas) :

95 mJ

Published :

1997

Drain to Source Voltage (Vdss) :

30V

Drain-source On Resistance-Max :

0.031Ohm

Rds On (Max) @ Id, Vgs :

31m Ω @ 18A, 10V

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Drain Current-Max (Abs) (ID) :

20A

Case Connection :

DRAIN

Terminal Finish :

MATTE TIN OVER NICKEL

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSSO-G2

DS Breakdown Voltage-Min :

30V

Vgs (Max) :

±20V

Terminal Position :

Single

ECCN Code :

EAR99

FET Type :

N-Channel