IRFR3303TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

30

Turn-Off Delay Time :

16 ns

Lead Free :

Contains Lead, Lead Free

Rds On (Max) @ Id, Vgs :

31m Ω @ 18A, 10V

Fall Time (Typ) :

28 ns

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Turn On Delay Time :

11 ns

RoHS Status :

ROHS3 Compliant

Current Rating :

33A

Voltage - Rated DC :

30V

Width :

6.22mm

Number of Terminations :

2

JEDEC-95 Code :

TO-252AA

ECCN Code :

EAR99

Resistance :

31mOhm

Factory Lead Time :

12 Weeks

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

750pF @ 25V

Drain to Source Breakdown Voltage :

30V

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PSSO-G2

Series :

HEXFET®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Power Dissipation :

57W

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

3

Length :

6.7056mm

Transistor Element Material :

SILICON

Rise Time :

99ns

Element Configuration :

Single

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Power Dissipation-Max :

57W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

33A Tc

Published :

2004

Continuous Drain Current (ID) :

33A

Height :

2.3876mm

Number of Elements :

1

JESD-609 Code :

e3

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

4V @ 250µA

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

Operating Mode :

ENHANCEMENT MODE

Contact Plating :

Tin

Avalanche Energy Rating (Eas) :

95 mJ

Peak Reflow Temperature (Cel) :

260

Drain Current-Max (Abs) (ID) :

20A