IRFR3303TRPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Power Dissipation :

57W

JESD-30 Code :

R-PSSO-G2

Current Rating :

33A

ECCN Code :

EAR99

JESD-609 Code :

e3

Factory Lead Time :

12 Weeks

Drain to Source Breakdown Voltage :

30V

Rds On (Max) @ Id, Vgs :

31m Ω @ 18A, 10V

Number of Terminations :

2

Mounting Type :

Surface Mount

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Power Dissipation-Max :

57W Tc

Terminal Form :

Gull wing

Avalanche Energy Rating (Eas) :

95 mJ

Case Connection :

DRAIN

Contact Plating :

Tin

Time@Peak Reflow Temperature-Max (s) :

30

Input Capacitance (Ciss) (Max) @ Vds :

750pF @ 25V

Voltage - Rated DC :

30V

JEDEC-95 Code :

TO-252AA

Operating Temperature :

-55°C~150°C TJ

Drain Current-Max (Abs) (ID) :

20A

Current - Continuous Drain (Id) @ 25°C :

33A Tc

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Continuous Drain Current (ID) :

33A

Rise Time :

99ns

Length :

6.7056mm

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Element Material :

SILICON

Turn On Delay Time :

11 ns

Turn-Off Delay Time :

16 ns

Number of Pins :

3

Gate to Source Voltage (Vgs) :

20V

Width :

6.22mm

Fall Time (Typ) :

28 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Resistance :

31mOhm

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

Published :

2004

Packaging :

Tape and Reel (TR)

Series :

HEXFET®

Height :

2.3876mm

Element Configuration :

Single

Lead Free :

Contains Lead, Lead Free

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V