IRFR3303TRLPBF
- Mfr.Part #
- IRFR3303TRLPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 33A DPAK
- Stock
- 46,752
- In Stock :
- 46,752
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Length :
- 6.7056mm
- Vgs (Max) :
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 750pF @ 25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Breakdown Voltage :
- 30V
- Fall Time (Typ) :
- 28 ns
- Lead Free :
- Lead Free
- Input Capacitance :
- 750pF
- Height :
- 2.3876mm
- Operating Temperature :
- -55°C~150°C TJ
- Width :
- 6.22mm
- Drain to Source Resistance :
- 31mOhm
- Element Configuration :
- Single
- Min Operating Temperature :
- -55°C
- Turn-Off Delay Time :
- 16 ns
- Number of Pins :
- 3
- Series :
- HEXFET®
- Published :
- 2004
- Voltage - Rated DC :
- 30V
- Gate Charge (Qg) (Max) @ Vgs :
- 29nC @ 10V
- Mounting Type :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 31mOhm @ 18A, 10V
- Drain to Source Voltage (Vdss) :
- 30V
- Packaging :
- Tape and Reel (TR)
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Current Rating :
- 33A
- Gate to Source Voltage (Vgs) :
- 20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Current - Continuous Drain (Id) @ 25°C :
- 33A Tc
- Turn On Delay Time :
- 11 ns
- Radiation Hardening :
- No
- Power Dissipation-Max :
- 57W Tc
- Rds On Max :
- 31 mΩ
- Mount :
- Surface Mount
- Continuous Drain Current (ID) :
- 33A
- FET Type :
- N-Channel
- RoHS Status :
- RoHS Compliant
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package :
- D-Pak
- Max Operating Temperature :
- 150°C
- Power Dissipation :
- 57W
- Rise Time :
- 99ns
- Datasheets
- IRFR3303TRLPBF

N-Channel Tape & Reel (TR) 31mOhm @ 18A, 10V ±20V 750pF @ 25V 29nC @ 10V 30V TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR3303TRLPBF Overview
A device's maximal input capacitance is 750pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 33A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 30V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 16 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 31mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 11 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 30V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IRFR3303TRLPBF Features
a continuous drain current (ID) of 33A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 16 ns
single MOSFETs transistor is 31mOhm
a 30V drain to source voltage (Vdss)
IRFR3303TRLPBF Applications
There are a lot of Infineon Technologies
IRFR3303TRLPBF applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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