IRFR3303TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

2

Drain-source On Resistance-Max :

0.031Ohm

Surface Mount :

yes

DS Breakdown Voltage-Min :

30V

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

Terminal Position :

Single

JESD-30 Code :

R-PSSO-G2

RoHS Status :

Non-RoHS Compliant

Number of Elements :

1

JEDEC-95 Code :

TO-252AA

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

31m Ω @ 18A, 10V

Pulsed Drain Current-Max (IDM) :

120A

Drain to Source Voltage (Vdss) :

30V

Terminal Form :

Gull wing

Qualification Status :

Not Qualified

Current - Continuous Drain (Id) @ 25°C :

33A Tc

Avalanche Energy Rating (Eas) :

95 mJ

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

1997

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain Current-Max (Abs) (ID) :

20A

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

750pF @ 25V

Mounting Type :

Surface Mount

Reach Compliance Code :

not_compliant

Series :

HEXFET®

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Power Dissipation-Max :

57W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

30

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63