IRFR3303PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PSSO-G2

Width :

6.223mm

Dual Supply Voltage :

30V

Transistor Element Material :

SILICON

Power Dissipation :

57W

Termination :

SMD/SMT

Continuous Drain Current (ID) :

33A

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Surface Mount

Published :

1997

FET Type :

N-Channel

Terminal Form :

Gull wing

Lead Free :

Lead Free

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Length :

6.7056mm

Number of Elements :

1

Height :

2.3876mm

Current Rating :

33A

Number of Terminations :

2

Power Dissipation-Max :

57W Tc

Case Connection :

DRAIN

Turn-Off Delay Time :

16 ns

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

Vgs (Max) :

±20V

Drain Current-Max (Abs) (ID) :

20A

Rise Time :

99ns

Number of Pins :

3

Voltage - Rated DC :

30V

Transistor Application :

SWITCHING

REACH SVHC :

No SVHC

Fall Time (Typ) :

28 ns

Recovery Time :

80 ns

Mount :

Surface Mount

ECCN Code :

EAR99

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

30V

Turn On Delay Time :

11 ns

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Rds On (Max) @ Id, Vgs :

31m Ω @ 18A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

95 mJ

Nominal Vgs :

4 V

Series :

HEXFET®

JEDEC-95 Code :

TO-252AA

Packaging :

Tube

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

33A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~150°C TJ

Reach Compliance Code :

not_compliant

Peak Reflow Temperature (Cel) :

260

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

750pF @ 25V

Qualification Status :

Not Qualified

Element Configuration :

Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Time@Peak Reflow Temperature-Max (s) :

30

Pulsed Drain Current-Max (IDM) :

120A