IRFR320
- Mfr.Part #
- IRFR320
- Manufacturer
- Vishay
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 400V 3.1A DPAK
- Stock
- 29,158
- In Stock :
- 29,158
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mount :
- Surface Mount
- Continuous Drain Current (ID) :
- 3.1A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Drain to Source Breakdown Voltage :
- 400V
- Input Capacitance :
- 350pF
- Lead Free :
- Contains Lead
- Supplier Device Package :
- D-Pak
- FET Type :
- N-Channel
- Turn-Off Delay Time :
- 30 ns
- Vgs (Max) :
- ±20V
- RoHS Status :
- Non-RoHS Compliant
- Power Dissipation :
- 42W
- Voltage - Rated DC :
- 400V
- Rise Time :
- 14ns
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Rds On (Max) @ Id, Vgs :
- 1.8Ohm @ 1.9A, 10V
- Drain to Source Resistance :
- 1.8Ohm
- Height :
- 2.39mm
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn On Delay Time :
- 10 ns
- Min Operating Temperature :
- -55°C
- Weight :
- 1.437803g
- Max Operating Temperature :
- 150°C
- Number of Channels :
- 1
- Power Dissipation-Max :
- 2.5W Ta 42W Tc
- Length :
- 6.73mm
- Gate to Source Voltage (Vgs) :
- 20V
- Gate Charge (Qg) (Max) @ Vgs :
- 20nC @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 3.1A Tc
- Element Configuration :
- Single
- Fall Time (Typ) :
- 13 ns
- Width :
- 6.22mm
- Number of Pins :
- 3
- Current Rating :
- 3.1A
- Drain to Source Voltage (Vdss) :
- 400V
- Published :
- 2016
- Rds On Max :
- 1.8 Ω
- Operating Temperature :
- -55°C~150°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 350pF @ 25V
- Packaging :
- Tube
- Datasheets
- IRFR320
N-Channel Tube 1.8Ohm @ 1.9A, 10V ±20V 350pF @ 25V 20nC @ 10V 400V TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR320 Overview
A device's maximum input capacitance is 350pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 3.1A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=400V, and this device has a drain-to-source breakdown voltage of 400V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 30 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 1.8Ohm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 400V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IRFR320 Features
a continuous drain current (ID) of 3.1A
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 30 ns
single MOSFETs transistor is 1.8Ohm
a 400V drain to source voltage (Vdss)
IRFR320 Applications
There are a lot of Vishay Siliconix
IRFR320 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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