IRFR2905ZTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Max Junction Temperature (Tj) :

175°C

Operating Temperature :

-55°C~175°C TJ

Continuous Drain Current (ID) :

59A

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Rise Time :

66ns

JEDEC-95 Code :

TO-252AA

REACH SVHC :

No SVHC

Threshold Voltage :

4V

Gate to Source Voltage (Vgs) :

20V

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

14.5m Ω @ 36A, 10V

Voltage - Rated DC :

55V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

FET Type :

N-Channel

Mounting Type :

Surface Mount

Mount :

Surface Mount

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

HEXFET®

Vgs(th) (Max) @ Id :

4V @ 250µA

Resistance :

14.5mOhm

Power Dissipation-Max :

110W Tc

Length :

6.7056mm

Contact Plating :

Tin

Power Dissipation :

110W

Number of Terminations :

2

Width :

6.22mm

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

31 ns

Terminal Form :

Gull wing

Drain to Source Breakdown Voltage :

55V

RoHS Status :

ROHS3 Compliant

Lead Free :

Contains Lead, Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

1380pF @ 25V

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Fall Time (Typ) :

35 ns

Current Rating :

42A

Pulsed Drain Current-Max (IDM) :

240A

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Turn On Delay Time :

14 ns

Current - Continuous Drain (Id) @ 25°C :

42A Tc

Time@Peak Reflow Temperature-Max (s) :

30

Avalanche Energy Rating (Eas) :

82 mJ

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

44nC @ 10V

JESD-30 Code :

R-PSSO-G2

Published :

2010

Factory Lead Time :

12 Weeks

Height :

2.39mm

Nominal Vgs :

4 V

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

Case Connection :

DRAIN