IRFR2905ZTRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PSSO-G2

JESD-609 Code :

e3

Terminal Position :

Single

Case Connection :

DRAIN

ECCN Code :

EAR99

Avalanche Energy Rating (Eas) :

82 mJ

Gate Charge (Qg) (Max) @ Vgs :

44nC @ 10V

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

1380pF @ 25V

Vgs(th) (Max) @ Id :

4V @ 250µA

Packaging :

Tape and Reel (TR)

Drain to Source Voltage (Vdss) :

55V

Reach Compliance Code :

not_compliant

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

55V

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

14.5m Ω @ 36A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pulsed Drain Current-Max (IDM) :

240A

Power Dissipation-Max :

110W Tc

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

JEDEC-95 Code :

TO-252AA

Drain-source On Resistance-Max :

0.0145Ohm

Vgs (Max) :

±20V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

2

Surface Mount :

yes

Qualification Status :

Not Qualified

Operating Temperature :

-55°C~175°C TJ

Transistor Element Material :

SILICON

Number of Elements :

1

Series :

HEXFET®

Published :

2003

Time@Peak Reflow Temperature-Max (s) :

30

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

42A

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

42A Tc