IRFR2607ZTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

12 Weeks

Reach Compliance Code :

not_compliant

ECCN Code :

EAR99

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Number of Elements :

1

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

JESD-30 Code :

R-PSSO-G2

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

22m Ω @ 30A, 10V

Pulsed Drain Current-Max (IDM) :

180A

Terminal Form :

Gull wing

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

96 mJ

Time@Peak Reflow Temperature-Max (s) :

30

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max (Abs) :

110W

Published :

2004

Qualification Status :

Not Qualified

Gate Charge (Qg) (Max) @ Vgs :

51nC @ 10V

Vgs(th) (Max) @ Id :

4V @ 50μA

Drain Current-Max (Abs) (ID) :

42A

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

1440pF @ 25V

Case Connection :

DRAIN

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Drain-source On Resistance-Max :

0.022Ohm

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature (Max) :

175°C

JEDEC-95 Code :

TO-252AA

Drain to Source Voltage (Vdss) :

75V

Series :

HEXFET®

DS Breakdown Voltage-Min :

75V

Number of Terminations :

2

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Single

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

42A Tc