IRFR2607Z

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

75V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

42A

Number of Terminations :

2

Terminal Finish :

TIN LEAD

JESD-609 Code :

e0

Drain-source On Resistance-Max :

0.022Ohm

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

42A Tc

JEDEC-95 Code :

TO-252AA

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

Vgs(th) (Max) @ Id :

4V @ 50μA

Power Dissipation-Max :

110W Tc

Time@Peak Reflow Temperature-Max (s) :

30

Input Capacitance (Ciss) (Max) @ Vds :

1440pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

245

RoHS Status :

Non-RoHS Compliant

Rds On (Max) @ Id, Vgs :

22m Ω @ 30A, 10V

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Published :

2004

Packaging :

Tube

FET Type :

N-Channel

Case Connection :

DRAIN

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs (Max) :

±20V

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

51nC @ 10V

Surface Mount :

yes

Series :

HEXFET®

Pulsed Drain Current-Max (IDM) :

180A

Avalanche Energy Rating (Eas) :

96 mJ

Configuration :

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

75V

JESD-30 Code :

R-PSSO-G2

Operating Temperature :

-55°C~175°C TJ

Terminal Position :

Single