IRFR2605

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

100 mJ

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

ESD PROTECTED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE, FAST SWITCHING

Drain-source On Resistance-Max :

0.085Ohm

Operating Temperature (Max) :

150°C

Pulsed Drain Current-Max (IDM) :

76A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

420pF @ 25V

DS Breakdown Voltage-Min :

55V

JESD-609 Code :

e0

Vgs (Max) :

±20V

Terminal Position :

Single

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Terminations :

2

RoHS Status :

Non-RoHS Compliant

Surface Mount :

yes

Rds On (Max) @ Id, Vgs :

85m Ω @ 11A, 10V

Case Connection :

DRAIN

Drain Current-Max (Abs) (ID) :

19A

Published :

1996

JEDEC-95 Code :

TO-252AA

Terminal Finish :

TIN LEAD

Terminal Form :

Gull wing

JESD-30 Code :

R-PSSO-G2

Qualification Status :

Not Qualified

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

19A Tc

Series :

HEXFET®

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Transistor Element Material :

SILICON

Packaging :

Tube

Drain to Source Voltage (Vdss) :

55V

Peak Reflow Temperature (Cel) :

245

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V

Power Dissipation-Max :

50W Tc

Time@Peak Reflow Temperature-Max (s) :

30