IRFR24N15DTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Operating Temperature :

-55°C~175°C TJ

Transistor Element Material :

SILICON

Power Dissipation-Max :

140W Tc

Voltage - Rated DC :

150V

Turn On Delay Time :

11 ns

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

260

Gate to Source Voltage (Vgs) :

30V

Nominal Vgs :

5 V

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

890pF @ 25V

Threshold Voltage :

5V

Mounting Type :

Surface Mount

Current Rating :

24A

Time@Peak Reflow Temperature-Max (s) :

30

Width :

2.39mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

6.7056mm

Lead Free :

Lead Free

ECCN Code :

EAR99

Turn-Off Delay Time :

19 ns

FET Type :

N-Channel

REACH SVHC :

No SVHC

Current - Continuous Drain (Id) @ 25°C :

24A Tc

Vgs(th) (Max) @ Id :

5V @ 250μA

Continuous Drain Current (ID) :

24A

Drain to Source Breakdown Voltage :

150V

Height :

2.26mm

Element Configuration :

Single

Series :

HEXFET®

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

95m Ω @ 14A, 10V

JEDEC-95 Code :

TO-252AA

Number of Elements :

1

Resistance :

95Ohm

JESD-30 Code :

R-PSSO-G2

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Rise Time :

53ns

Pulsed Drain Current-Max (IDM) :

96A

Radiation Hardening :

No

JESD-609 Code :

e3

Dual Supply Voltage :

150V

Fall Time (Typ) :

15 ns

Factory Lead Time :

12 Weeks

Number of Terminations :

2

Vgs (Max) :

±30V

Power Dissipation :

140W

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Published :

2010

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

Terminal Form :

Gull wing