IRFR2407TRR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

26m Ω @ 25A, 10V

Surface Mount :

yes

JEDEC-95 Code :

TO-252AA

JESD-30 Code :

R-PSSO-G2

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

RoHS Status :

Non-RoHS Compliant

Number of Terminations :

2

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

75V

Pulsed Drain Current-Max (IDM) :

170A

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Terminal Position :

Single

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

DS Breakdown Voltage-Min :

75V

Avalanche Energy Rating (Eas) :

130 mJ

Peak Reflow Temperature (Cel) :

260

Drain-source On Resistance-Max :

0.026ohm

Current - Continuous Drain (Id) @ 25°C :

42A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Published :

2000

ECCN Code :

EAR99

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

HEXFET®

Number of Elements :

1

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain Current-Max (Abs) (ID) :

42A

Operating Temperature :

-55°C~175°C TJ

Power Dissipation-Max :

110W Tc

Time@Peak Reflow Temperature-Max (s) :

30

Input Capacitance (Ciss) (Max) @ Vds :

2400pF @ 25V