IRFR2407TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Voltage - Rated DC :

75V

Length :

6.7056mm

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

ECCN Code :

EAR99

Threshold Voltage :

4V

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Number of Pins :

3

Power Dissipation-Max :

110W Tc

Input Capacitance (Ciss) (Max) @ Vds :

2400pF @ 25V

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Dual Supply Voltage :

75V

Width :

6.22mm

Nominal Vgs :

4 V

Lead Free :

Lead Free

Height :

2.3876mm

Series :

HEXFET®

RoHS Status :

ROHS3 Compliant

JEDEC-95 Code :

TO-252AA

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

4V @ 250µA

Time@Peak Reflow Temperature-Max (s) :

30

Published :

2000

Rds On (Max) @ Id, Vgs :

26m Ω @ 25A, 10V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drain to Source Breakdown Voltage :

75V

Power Dissipation :

110W

JESD-30 Code :

R-PSSO-G2

Resistance :

26mOhm

Mount :

Surface Mount

REACH SVHC :

No SVHC

Case Connection :

DRAIN

Operating Temperature :

-55°C~175°C TJ

Termination :

SMD/SMT

Vgs (Max) :

±20V

Radiation Hardening :

No

Number of Terminations :

2

Continuous Drain Current (ID) :

42A

Gate to Source Voltage (Vgs) :

20V

Rise Time :

90ns

Current Rating :

42A

Element Configuration :

Single

Turn On Delay Time :

16 ns

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

42A Tc

Turn-Off Delay Time :

65 ns

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

FET Type :

N-Channel

Fall Time (Typ) :

66 ns

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Factory Lead Time :

12 Weeks

Packaging :

Tape and Reel (TR)

Recovery Time :

150 ns