IRFR2407TRL

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

110W Tc

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Voltage - Rated DC :

75V

ECCN Code :

EAR99

Number of Terminations :

2

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Qualification Status :

Not Qualified

Avalanche Energy Rating (Eas) :

130 mJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Published :

2000

Rise Time :

90ns

Time@Peak Reflow Temperature-Max (s) :

30

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

170A

Reach Compliance Code :

not_compliant

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

4V @ 250µA

Packaging :

Tape and Reel (TR)

Drain Current-Max (Abs) (ID) :

30A

Lead Free :

Contains Lead

JEDEC-95 Code :

TO-252AA

Peak Reflow Temperature (Cel) :

260

Current Rating :

42A

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

42A Tc

Rds On (Max) @ Id, Vgs :

26m Ω @ 25A, 10V

Drain-source On Resistance-Max :

0.026ohm

Series :

HEXFET®

Transistor Element Material :

SILICON

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

2400pF @ 25V

JESD-30 Code :

R-PSSO-G2

Continuous Drain Current (ID) :

42A

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Mounting Type :

Surface Mount

Number of Elements :

1

Terminal Position :

Single

Operating Temperature :

-55°C~175°C TJ

JESD-609 Code :

e3

Mount :

Surface Mount

RoHS Status :

Non-RoHS Compliant