IRFR2405TRR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Single

Pulsed Drain Current-Max (IDM) :

220A

Drain-source On Resistance-Max :

0.0016Ohm

Case Connection :

DRAIN

JESD-30 Code :

R-PSSO-G2

Series :

HEXFET®

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

30

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~175°C TJ

Qualification Status :

Not Qualified

JEDEC-95 Code :

TO-252AA

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Drain to Source Voltage (Vdss) :

55V

DS Breakdown Voltage-Min :

55V

FET Type :

N-Channel

ECCN Code :

EAR99

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Drain Current-Max (Abs) (ID) :

30A

Avalanche Energy Rating (Eas) :

130 mJ

Transistor Element Material :

SILICON

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

JESD-609 Code :

e3

Number of Terminations :

2

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Surface Mount :

yes

Power Dissipation-Max :

110W Tc

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

56A Tc

RoHS Status :

Non-RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds :

2430pF @ 25V

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

16m Ω @ 34A, 10V

Published :

2000

Packaging :

Tape and Reel (TR)