IRFR2405TRPBF
- Mfr.Part #
- IRFR2405TRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 56A DPAK
- Stock
- 110,198
- In Stock :
- 110,198
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 56A Tc
- Additional Feature :
- AVALANCHE RATED, HIGH RELIABILITY
- Avalanche Energy Rating (Eas) :
- 130 mJ
- ECCN Code :
- EAR99
- Input Capacitance (Ciss) (Max) @ Vds :
- 2430pF @ 25V
- Vgs (Max) :
- ±20V
- Peak Reflow Temperature (Cel) :
- 260
- JESD-30 Code :
- R-PSSO-G2
- FET Type :
- N-Channel
- Drain-source On Resistance-Max :
- 0.016Ohm
- Gate Charge (Qg) (Max) @ Vgs :
- 110nC @ 10V
- Published :
- 2000
- Case Connection :
- DRAIN
- Terminal Form :
- Gull wing
- Drain Current-Max (Abs) (ID) :
- 30A
- Number of Terminations :
- 2
- Operating Temperature :
- -55°C~175°C TJ
- Factory Lead Time :
- 12 Weeks
- Reach Compliance Code :
- not_compliant
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max :
- 110W Tc
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Series :
- HEXFET®
- JEDEC-95 Code :
- TO-252AA
- Terminal Position :
- Single
- Packaging :
- Tape and Reel (TR)
- Rds On (Max) @ Id, Vgs :
- 16m Ω @ 34A, 10V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Mounting Type :
- Surface Mount
- Drain to Source Voltage (Vdss) :
- 55V
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pulsed Drain Current-Max (IDM) :
- 220A
- Qualification Status :
- Not Qualified
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- DS Breakdown Voltage-Min :
- 55V
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Surface Mount :
- yes
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- IRFR2405TRPBF

N-Channel Tape & Reel (TR) 16m Ω @ 34A, 10V ±20V 2430pF @ 25V 110nC @ 10V 55V TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR2405TRPBF Description
International Rectifier's Seventh Generation HEXFET? Power MOSFETs use cutting-edge processing methods to produce extraordinarily low on-resistance per silicon area. This feature offers the designer a highly efficient and dependable device for usage in a range of applications, in addition to the quick switching speed and ruggedized device architecture that HEXFET power MOSFETs are widely known for. The D-Pak is made to be surface mounted utilizing infrared, vapor phase, or wave soldering methods. For throughhole mounting applications, use the straight lead version (IRFU series). In normal surface mount applications, power dissipation levels of up to 1.5 watts are conceivable.
IRFR2405TRPBF Features
?60 A, 30 V Rds(on) = 12 mQ @ Vgs = 4.5 V @ Vqs = 10 V
?At high temperatures, critical DC electrical parameters are provided.
?High-performance trenching for incredibly low radiation
?Maximum junction temperature rating: 175 cC.
IRFR2405TRPBF Applications
Switching applications
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