IRFR2405TRPBF

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Mfr.Part #
IRFR2405TRPBF
Manufacturer
Infineon Technologies
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 55V 56A DPAK
Stock
110,198
In Stock :
110,198

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
56A Tc
Additional Feature :
AVALANCHE RATED, HIGH RELIABILITY
Avalanche Energy Rating (Eas) :
130 mJ
ECCN Code :
EAR99
Input Capacitance (Ciss) (Max) @ Vds :
2430pF @ 25V
Vgs (Max) :
±20V
Peak Reflow Temperature (Cel) :
260
JESD-30 Code :
R-PSSO-G2
FET Type :
N-Channel
Drain-source On Resistance-Max :
0.016Ohm
Gate Charge (Qg) (Max) @ Vgs :
110nC @ 10V
Published :
2000
Case Connection :
DRAIN
Terminal Form :
Gull wing
Drain Current-Max (Abs) (ID) :
30A
Number of Terminations :
2
Operating Temperature :
-55°C~175°C TJ
Factory Lead Time :
12 Weeks
Reach Compliance Code :
not_compliant
Configuration :
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max :
110W Tc
Time@Peak Reflow Temperature-Max (s) :
30
Series :
HEXFET®
JEDEC-95 Code :
TO-252AA
Terminal Position :
Single
Packaging :
Tape and Reel (TR)
Rds On (Max) @ Id, Vgs :
16m Ω @ 34A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Mounting Type :
Surface Mount
Drain to Source Voltage (Vdss) :
55V
Terminal Finish :
Matte Tin (Sn) - with Nickel (Ni) barrier
Drive Voltage (Max Rds On,Min Rds On) :
10V
Pulsed Drain Current-Max (IDM) :
220A
Qualification Status :
Not Qualified
JESD-609 Code :
e3
Transistor Application :
SWITCHING
DS Breakdown Voltage-Min :
55V
Operating Mode :
ENHANCEMENT MODE
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Surface Mount :
yes
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Elements :
1
Transistor Element Material :
SILICON
RoHS Status :
ROHS3 Compliant
Datasheets
IRFR2405TRPBF
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IRFR2405TRPBF from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Operating Temperature:-55°C~175°C TJ, Mounting Type:Surface Mount, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, IRFR2405TRPBF pinout, IRFR2405TRPBF datasheet PDF, IRFR2405TRPBF amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IRFR2405TRPBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRFR2405TRPBF


N-Channel Tape & Reel (TR) 16m Ω @ 34A, 10V ±20V 2430pF @ 25V 110nC @ 10V 55V TO-252-3, DPak (2 Leads + Tab), SC-63

IRFR2405TRPBF Description


International Rectifier's Seventh Generation HEXFET? Power MOSFETs use cutting-edge processing methods to produce extraordinarily low on-resistance per silicon area. This feature offers the designer a highly efficient and dependable device for usage in a range of applications, in addition to the quick switching speed and ruggedized device architecture that HEXFET power MOSFETs are widely known for. The D-Pak is made to be surface mounted utilizing infrared, vapor phase, or wave soldering methods. For throughhole mounting applications, use the straight lead version (IRFU series). In normal surface mount applications, power dissipation levels of up to 1.5 watts are conceivable.



IRFR2405TRPBF Features


?60 A, 30 V Rds(on) = 12 mQ @ Vgs = 4.5 V @ Vqs = 10 V


?At high temperatures, critical DC electrical parameters are provided.


?High-performance trenching for incredibly low radiation


?Maximum junction temperature rating: 175 cC.



IRFR2405TRPBF Applications


Switching applications


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