IRFR2405TRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSSO-G2

Power Dissipation-Max :

110W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Surface Mount :

yes

Series :

HEXFET®

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

220A

JEDEC-95 Code :

TO-252AA

Factory Lead Time :

12 Weeks

Peak Reflow Temperature (Cel) :

260

Avalanche Energy Rating (Eas) :

130 mJ

Qualification Status :

Not Qualified

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Vgs (Max) :

±20V

Case Connection :

DRAIN

Terminal Form :

Gull wing

Operating Temperature :

-55°C~175°C TJ

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

55V

Reach Compliance Code :

not_compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.016Ohm

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30

JESD-609 Code :

e3

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

56A Tc

Transistor Element Material :

SILICON

Number of Terminations :

2

Rds On (Max) @ Id, Vgs :

16m Ω @ 34A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

2430pF @ 25V

Drain Current-Max (Abs) (ID) :

30A

Published :

2004

Number of Elements :

1

Drain to Source Voltage (Vdss) :

55V

Vgs(th) (Max) @ Id :

4V @ 250µA