IRFR2405PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

REACH SVHC :

No SVHC

Number of Elements :

1

Power Dissipation-Max :

110W Tc

FET Type :

N-Channel

Packaging :

Tube

Number of Pins :

3

Vgs(th) (Max) @ Id :

4V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

16m Ω @ 34A, 10V

Published :

2000

Lead Free :

Contains Lead, Lead Free

Height :

2.3876mm

Recovery Time :

93 ns

Threshold Voltage :

4V

Current Rating :

56A

Fall Time (Typ) :

78 ns

Series :

HEXFET®

Continuous Drain Current (ID) :

56A

Termination :

SMD/SMT

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

56A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Width :

6.22mm

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~175°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

2430pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Rise Time :

130ns

Voltage - Rated DC :

55V

ECCN Code :

EAR99

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Power Dissipation :

110W

Turn On Delay Time :

15 ns

Nominal Vgs :

4 V

Factory Lead Time :

52 Weeks

Turn-Off Delay Time :

55 ns

Drain to Source Breakdown Voltage :

55V

Vgs (Max) :

±20V

Element Configuration :

Single

Length :

6.7056mm

Dual Supply Voltage :

55V

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Contact Plating :

Tin