IRFR2307ZPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Qualification Status :

Not Qualified

Gate Charge (Qg) (Max) @ Vgs :

75nC @ 10V

FET Type :

N-Channel

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

DS Breakdown Voltage-Min :

75V

JESD-30 Code :

R-PSSO-G2

Published :

2004

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

yes

Avalanche Energy Rating (Eas) :

100 mJ

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

42A Tc

Vgs(th) (Max) @ Id :

4V @ 100µA

Case Connection :

DRAIN

Series :

HEXFET®

Terminal Form :

Gull wing

Number of Terminations :

2

Input Capacitance (Ciss) (Max) @ Vds :

2190pF @ 25V

Drain to Source Voltage (Vdss) :

75V

Rds On (Max) @ Id, Vgs :

16m Ω @ 32A, 10V

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Power Dissipation-Max :

110W Tc

Terminal Position :

Single

Operating Temperature :

-55°C~175°C TJ

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Drain Current-Max (Abs) (ID) :

42A

Packaging :

Tube

JEDEC-95 Code :

TO-252AA

Time@Peak Reflow Temperature-Max (s) :

30

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

HTS Code :

8541.29.00.95

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.016Ohm

Reach Compliance Code :

not_compliant

Pulsed Drain Current-Max (IDM) :

210A

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e3