IRFR2307Z

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2004

Power Dissipation-Max :

110W Tc

Time@Peak Reflow Temperature-Max (s) :

30

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

100 mJ

Packaging :

Tube

Drain to Source Voltage (Vdss) :

75V

DS Breakdown Voltage-Min :

75V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

75nC @ 10V

ECCN Code :

EAR99

Surface Mount :

yes

Rds On (Max) @ Id, Vgs :

16m Ω @ 32A, 10V

Series :

HEXFET®

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

JEDEC-95 Code :

TO-252AA

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

42A

JESD-30 Code :

R-PSSO-G2

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pulsed Drain Current-Max (IDM) :

210A

Number of Elements :

1

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drain-source On Resistance-Max :

0.016Ohm

Number of Terminations :

2

Peak Reflow Temperature (Cel) :

245

Operating Temperature :

-55°C~175°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

2190pF @ 25V

Vgs(th) (Max) @ Id :

4V @ 100µA

Terminal Position :

Single

Terminal Finish :

TIN LEAD

RoHS Status :

Non-RoHS Compliant

Vgs (Max) :

±20V

Case Connection :

DRAIN

Transistor Element Material :

SILICON

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

42A Tc

Terminal Form :

Gull wing

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-609 Code :

e0

Transistor Application :

SWITCHING

Qualification Status :

Not Qualified