IRFR224TRPBF
- Mfr.Part #
- IRFR224TRPBF
- Manufacturer
- Vishay
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 3.8A DPAK
- Stock
- 4,733
- In Stock :
- 4,733
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Resistance :
- 1.1Ohm
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation :
- 2.5W
- Supplier Device Package :
- D-Pak
- Published :
- 2014
- REACH SVHC :
- Unknown
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Nominal Vgs :
- 2 V
- Weight :
- 1.437803g
- Radiation Hardening :
- No
- Gate Charge (Qg) (Max) @ Vgs :
- 14nC @ 10V
- Fall Time (Typ) :
- 12 ns
- Max Operating Temperature :
- 150°C
- Input Capacitance :
- 260pF
- Mount :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 260pF @ 25V
- Lead Free :
- Lead Free
- Turn On Delay Time :
- 7 ns
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Element Configuration :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 3.8A Tc
- Number of Channels :
- 1
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Threshold Voltage :
- 4V
- Rise Time :
- 13ns
- Drain to Source Resistance :
- 1.1Ohm
- Width :
- 6.22mm
- FET Type :
- N-Channel
- RoHS Status :
- ROHS3 Compliant
- Min Operating Temperature :
- -55°C
- Length :
- 6.73mm
- Gate to Source Voltage (Vgs) :
- 20V
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Height :
- 2.39mm
- Rds On (Max) @ Id, Vgs :
- 1.1Ohm @ 2.3A, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rds On Max :
- 1.1 Ω
- Drain to Source Voltage (Vdss) :
- 250V
- Power Dissipation-Max :
- 2.5W Ta 42W Tc
- Turn-Off Delay Time :
- 20 ns
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 8 Weeks
- Continuous Drain Current (ID) :
- 3.8A
- Datasheets
- IRFR224TRPBF
N-Channel Tape & Reel (TR) 1.1Ohm @ 2.3A, 10V ±20V 260pF @ 25V 14nC @ 10V 250V TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR224TRPBF Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 260pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 20 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 1.1Ohm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 7 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 4V.The transistor must receive a 250V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IRFR224TRPBF Features
a continuous drain current (ID) of 3.8A
the turn-off delay time is 20 ns
single MOSFETs transistor is 1.1Ohm
a threshold voltage of 4V
a 250V drain to source voltage (Vdss)
IRFR224TRPBF Applications
There are a lot of Vishay Siliconix
IRFR224TRPBF applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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